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参数资料
| 型号： | AP25T03GJ |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 70K |
| 代理商： | AP25T03GJ |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=12A
-
35
mΩ
VGS=4.5V, ID=7A
-
55
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=12A
-
13
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=30V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=24V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=12A
-
6
10
nC
Qgs
Gate-Source Charge
VDS=24V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
6
-
ns
tr
Rise Time
ID=12A
-
200
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
10
-
ns
tf
Fall Time
RD=1.25Ω
-3
-
ns
Ciss
Input Capacitance
VGS=0V
-
440
705
pF
Coss
Output Capacitance
VDS=25V
-
105
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=12A, VGS=0V
-
1.3
V
t
rr
Reverse Recovery Time
2
IS=12A, VGS=0V,
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
6
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP25T03GH/J
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