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参数资料
| 型号： | AP25T03GJ |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 70K |
| 代理商： | AP25T03GJ |
AP25T03GH/J
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
Q
VG
4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
12
14
04
8
12
16
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =15V
V DS =20V
V DS =24V
I D = 12A
10
100
1000
1
5
9
1317
2125
29
V DS ,Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0
5
10
15
20
25
30
02468
V GS , Gate-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T j =150
o C
T j =25
o C
V DS =5V
0.1
1
10
100
0.1
1
10
100
V DS ,Drain-to-Source Voltage (V)
I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
The
rmal
Re
sponse
(
R
thjc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
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