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参数资料
| 型号： | AP2332GN-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 27 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 91K |
| 代理商： | AP2332GN-HF |
AP2332GN-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Circuit
4
0
4
8
12
16
20
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2
2.4
2.8
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =0.1A
V DS =200V
Q
VG
10V
QGS
QGD
QG
Charge
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 250℃/W
t
T
0.02
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
1ms
10ms
100ms
1s
DC
td(on) tr
td(off) t
f
VDS
VGS
10%
90%
Operation in this area
limited by RDS(ON)
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相关代理商/技术参数 |
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| AP2334GN-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Fast Switching Characteristic, Lower Gate Charge |
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