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参数资料
| 型号： | AP2533GY-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 16 V, 0.15 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-6 |
| 文件页数： | 2/7页 |
| 文件大小： | 119K |
| 代理商： | AP2533GY-HF |
N-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
16
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=4.5V, ID=2A
-
150
m
VGS=2.5V, ID=1.5A
-
230
m
VGS=1.8V, ID=0.5A
-
450
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.2
-
1
V
gfs
Forward Transconductance
VDS=5V, ID=2A
-
8
-
S
IDSS
Drain-Source Leakage Current
VDS=12V, VGS=0V
-
1
uA
IGSS
Gate-Source Leakage
VGS=+8V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=2A
-
6.5
10.4
nC
Qgs
Gate-Source Charge
VDS=10V
-
0.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
1.5
-
nC
td(on)
Turn-on Delay Time
2
VDS=10V
-
8
-
ns
tr
Rise Time
ID=1A
-
15
-
ns
td(off)
Turn-off Delay Time
RG=3.3
-18
-
ns
tf
Fall Time
VGS=5V
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
350
560
pF
Coss
Output Capacitance
VDS=16V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=0.9A, VGS=0V
-
1.2
V
2
AP2533GY-HF
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