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参数资料
| 型号： | AP2533GY-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 16 V, 0.15 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-6 |
| 文件页数： | 6/7页 |
| 文件大小： | 119K |
| 代理商： | AP2533GY-HF |
AP2533GY-HF
P-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
6
0
2
4
6
8
0246
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A = 150
o C
-5.0V
-4.5V
-3.5V
-2.5V
V G = -2.0V
0.6
0.9
1.2
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D = -1.5 A
V G = -4.5 V
0.0
1.0
2.0
3.0
4.0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S(A
)
T j =25
o C
T j =150
o C
0
2
4
6
8
01
234
56
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
-5.0V
-4.5V
-3.5V
-2.5V
V G = - 2.0 V
100
120
140
160
180
200
220
024
68
-V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =- 1 A
T A =25
o C
0.4
0.6
0.8
1.0
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
-
V
GS(t
h)
(V
)
I D =-1mA
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