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参数资料
| 型号： | AP25P15GI |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 23 A, 140 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 96K |
| 代理商： | AP25P15GI |
AP25P15GI
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-1mA
-140
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-12A
-
95
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-12A
-
35
-
S
IDSS
Drain-Source Leakage Current
VDS=-120V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS= +20V
-
+100
nA
Qg
Total Gate Charge
2
ID=-18A
-
55
90
nC
Qgs
Gate-Source Charge
VDS=-80V
-
9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
17
-
nC
td(on)
Turn-on Delay Time
2
VDS=-50V
-
13
-
ns
tr
Rise Time
ID=-18A
-
34
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
84
-
ns
tf
Fall Time
RD=2.8Ω
-78
-
ns
Ciss
Input Capacitance
VGS=0V
-
5180 8300
pF
Coss
Output Capacitance
VDS=-25V
-
250
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
140
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.2
4.8
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=-12A, VGS=0V
-
-1.3
V
trr
Reverse Recovery Time
2
IS=-18A, VGS=0V,
-
70
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/s
-
235
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
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