参数资料
型号: AP25P15GI
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 23 A, 140 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: ROHS COMPLIANT, TO-220CFM, 3 PIN
文件页数: 4/4页
文件大小: 96K
代理商: AP25P15GI
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP25P15GI
Q
VG
-10V
QGS
QGD
QG
Charge
0
3
6
9
12
15
0
2040
6080
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS = -80 V
I D = -18 A
10
1000
1
5
9
1317
2125
29
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
1
10
100
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
td(on) tr
td(off) tf
VDS
VGS
10%
90%
相关PDF资料
PDF描述
AP2606AGY-HF 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
AP2607AGY-HF 5 A, 20 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET
AP2607GY-HF 5 A, 20 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET
AP2625GY 2 A, 30 V, 0.185 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
AP2761I-H-HF 6 A, 700 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相关代理商/技术参数
参数描述
AP25P15GS-HF 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP25SD 功能描述:整流器/与可变电容器 125Volts 1.0pF -23pF RoHS:否 制造商:Xicon 电容范围:2.8 pF to 12.5 pF 容差: 电压额定值:200 V 工作温度范围:- 35 C to + 85 C 端接类型:SMD/SMT 产品:Trimmer Capacitors - Ceramic Dielectric
AP25T03GJ 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge Simple Drive Requirement
AP25X1FGE-7 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:2.5A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH
AP25X1M8-13 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:2.5A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH