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参数资料
| 型号： | AP30G100W |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 60 A, 1000 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 214K |
| 代理商： | AP30G100W |
Fig 7. Turn-off SOA
Fig 8. Effective Transient Thermal
Impedance
Fig 9. Saturation Voltage vs. VGE
Fig 10. Saturation Voltage vs. VGE
Fig11. Power Dissipation vs. Junction
Fig 12. Gate Charge Characterisitics
Temperature
3/3
AP30G100W
0
4
8
12
16
20
0
20406080
Q G , Gate Charge (nC)
V
GE
,
G
a
te
-
E
mitte
rVoltage
(
V
)
I C =3 0A
V CC =200V
V CC =300V
V CC =500V
0
5
10
15
20
04
8
12
16
20
V GE , Gate-Emitter Voltage(V)
V
CE
,
Colle
c
tor-
E
mitte
rVoltage
(V
)
I C =60 A
30 A
15 A
T C =25
o C
0
5
10
15
20
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
V
CE
,
Colle
c
tor-
E
mitte
rVoltage
(V
)
I C =60 A
30 A
15 A
T C = 150
o C
1
10
100
1000
1
10
100
1000
10000
V CE , Collector-Emitter Voltage(V)
I
C
,Pe
ak
C
o
lle
c
tor
C
u
rre
n
t(
A
)
Safe Operating Area
V GE =15V
T C =125
o C
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
50
100
150
200
250
0
50
100
150
200
Junction Temperature ( ℃ )
Powe
rD
issipation
(
W
)
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