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参数资料
| 型号： | AP40U03GH |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/5页 |
| 文件大小： | 124K |
| 代理商： | AP40U03GH |
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
AP40U03GH
0
10
20
30
40
0.0
1.0
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =175
o C
10V
7 .0V
5.0V
4.5 V
V G =3.0V
0
10
20
30
40
50
60
0.0
1.0
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
7.0 V
5.0V
4.5 V
V G = 3.0 V
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
200
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =12A
V G =10V
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =175
o C
16
20
24
28
32
36
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =12A
T C =25
o C
0.0
0.4
0.8
1.2
1.6
-50
0
50
100
150
200
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
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