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参数资料
| 型号： | AP40U03GH |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 4/5页 |
| 文件大小： | 124K |
| 代理商： | AP40U03GH |
APTGF25DDA120T3
A
P
T
G
F
25
D
A
120T
3–
R
ev
0
J
anua
ry,
2005
APT website – http://www.advancedpower.com
4 - 6
Typical Performance Curve
Output characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
10
20
30
40
50
60
70
80
0
1234
5678
Ic
,C
o
lle
ct
o
rC
u
rre
n
t(
A
)
VCE, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Output Characteristics (VGE=10V)
TJ=25°C
TJ=125°C
0
4
8
12
16
20
00.511.5
2
2.533.5
Ic
,Co
lle
ct
o
rCu
rr
e
n
t(
A
)
VCE, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
TJ=25°C
TJ=125°C
0
20
40
60
80
100
120
0
2.5
5
7.5
10
12.5
15
VGE, Gate to Emitter Voltage (V)
Ic
,Co
lle
c
to
rCu
rr
en
t
(A
)
250s Pulse Test
< 0.5% Duty cycle
Gate Charge
VCE=240V
VCE=600V
VCE=960V
0
2
4
6
8
10
12
14
16
18
0
30
60
90
120
150
180
Gate Charge (nC)
V
GE
,G
at
eto
E
m
it
ter
V
o
lt
ag
e(V
)
IC = 25A
TJ = 25°C
Ic=50A
Ic=25A
Ic=12.5A
0
1
2
3
4
5
6
7
8
9
101112
13141516
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
V
CE
,C
o
lle
ct
o
rto
E
m
it
ter
V
o
ltag
e(V
)
TJ = 125°C
250s Pulse Test
< 0.5% Duty cycle
Ic=50A
Ic=25A
Ic=12.5A
0
1
2
3
4
5
6
-50
-25
0
25
50
75
100
125
TJ, Junction Temperature (°C)
V
CE
,C
o
ll
ect
o
rto
E
m
it
te
rV
o
lt
a
g
e(V
)
On state Voltage vs Junction Temperature
250s Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.80
0.85
0.90
0.95
1.00
1.05
1.10
-50
-25
0
25
50
75
100 125
TJ, Junction Temperature (°C)
C
o
lle
cto
rto
E
m
it
te
rB
re
akd
o
w
n
V
o
lt
ag
e
(N
orm
a
liz
e
d)
Breakdown Voltage vs Junction Temp.
0
10
20
30
40
50
60
-50
-25
0
25
50
75
100 125 150
TC, Case Temperature (°C)
Ic
,DC
Co
lle
ct
o
rCu
rr
en
t(
A
)
DC Collector Current vs Case Temperature
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