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参数资料
| 型号： | AP4816GSM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 30 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 3/9页 |
| 文件大小： | 134K |
| 代理商： | AP4816GSM |
CH-2 Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃,ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=11A
-
13
mΩ
VGS=4.5V, ID=8A
-
18.5
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=11A
-
15
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=30V, VGS=0V
-
100
uA
Drain-Source Leakage Current (
Tj=70
oC)
VDS=24V, VGS=0V
-
1
mA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=8A
-
20
30
nC
Qgs
Gate-Source Charge
VDS=24V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
12
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
12
-
ns
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
31
-
ns
tf
Fall Time
RD=15Ω
-12
-
ns
Ciss
Input Capacitance
VGS=0V
-
1450 2320
pF
Coss
Output Capacitance
VDS=25V
-
320
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
230
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=1A, VGS=0V
-
0.5
V
trr
Reverse Recovery Time
2
IS=8A, VGS=0V
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
18
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2 copper pad of FR4 board, t <10 sec.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
3/9
AP4816GSM
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
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