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参数资料
| 型号： | AP4816GSM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 30 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 5/9页 |
| 文件大小： | 134K |
| 代理商： | AP4816GSM |
Channel-1
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
5/9
AP4816GSM
0
20
40
60
80
100
120
012
345
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0
10
20
30
40
50
60
70
80
01
234
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
10V
7.0V
5.0V
4.5V
V G =3.0V
T A = 150 ℃
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j ,Junction Temperature (
o C)
N
o
rm
aliz
ed
R
DS
(ON)
I D =6A
V G =10V
16
20
24
28
32
357
9
11
V GS , Gate-to-Source Voltage (V)
R
DS
(ON)
(m
Ω
)
I D =5 A
T A =25
o C
0.5
1
1.5
2
2.5
-50
0
50
100
150
T j ,Junction Temperature (
o C)
V
GS
(t
h
)(V
)
0
1
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S
(A
)
T j =25
o C
T j =150
o C
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