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参数资料
| 型号： | AP4957AGM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 7.4 A, 30 V, 0.026 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 1/5页 |
| 文件大小： | 178K |
| 代理商： | AP4957AGM |
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-Resistance
BVDSS
-30V
▼ Simple Drive Requirement
RDS(ON)
26mΩ
▼ Dual P MOSFET Package
ID
-7.4A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
℃/W
Data and specifications subject to change without notice
200712191
Thermal Data
Parameter
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Storage Temperature Range
Continuous Drain Current
3
-5.9
Pulsed Drain Current
1
-30
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
AP4957AGM
Rating
RoHS-compliant Product
1
-30
±20
-7.4
S1
G1
S2
G2
D1
D2
SO-8
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
D2
S2
G1
D1
S1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP4957GM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4957M | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4959GM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4961GM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Simple Drive Requirement |
| AP4963GEM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower Gate Charge |
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