参数资料
型号: AP60T03GS
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: ROHS COMPLIANT, TO-263, 3 PIN
文件页数: 3/6页
文件大小: 200K
代理商: AP60T03GS
AP60T03GS/P
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
30
60
90
012
345
V DS , Drain-to-Source Voltage (V)
I
D
,
Drain
Cu
rre
n
t(A)
T C =175
o C
10V
8.0V
6.0V
5.0V
V G =4.0V
0
25
50
75
100
125
01
23
4
V DS , Drain-to-Source Voltage (V)
I
D
,
Drain
Cu
rre
n
t(A)
T C =25
o C
10V
8.0V
6.0V
5.0V
V G =4.0V
0.4
0.8
1.2
1.6
2
-50
25
100
175
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(
ON)
I D =20A
V G =10V
0
20
40
60
80
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D =15A
T C =25
0.1
1
10
100
0
0.5
1
1.5
V SD , Source-to-Drain Voltage (V)
I
S
(A
)
T j =25
o C
T j =175
o C
0
1
2
3
-50
25
100
175
T j , Junction Temperature (
o C )
V
GS(
th)
(V
)
3
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