参数资料
型号: AP6618GM-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 7 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: HALOGEN FREE AND ROHS COMPLIANT, SOP-8
文件页数: 1/4页
文件大小: 94K
代理商: AP6618GM-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
30V
▼ Fast Switching Characteristic
RDS(ON)
30mΩ
▼ Surface Mount Package
ID
7A
▼ Halogen Free & RoHS Compliant Product
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
50
/W
Data and specifications subject to change without notice
Halogen-Free Product
1
AP6618GM-HF
201004132
Parameter
Rating
Drain-Source Voltage
30
Gate-Source Voltage
+20
Continuous Drain Current
3
7
Continuous Drain Current
3
5.8
Pulsed Drain Current
1
30
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Thermal Data
Parameter
Storage Temperature Range
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S
G
D
SO-8
G
D
S
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