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参数资料
| 型号： | AP6618GM-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 7 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件页数： | 4/4页 |
| 文件大小： | 94K |
| 代理商： | AP6618GM-HF |
AP6618GM-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
No
rm
a
lized
T
h
erm
a
lResp
o
n
se
(
R
th
ja
)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
0
3
6
9
12
04
8
12
16
Q G , Total Gate Charge (nC)
V
GS
,
Ga
te
to
S
o
u
rce
V
o
lta
g
e(V
)
I D =7.0A
V DS =16V
V DS =20V
V DS =24V
10
100
1000
1
7
13
19
25
31
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MH
Ciss
Coss
Crss
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
Operation in this
area limited by
RDS(ON)
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相关代理商/技术参数 |
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|---|---|
| AP6677GH | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Simple Drive Requirement, Fast Switching Characteristic |
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