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参数资料
| 型号： | AP62T03GJ |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 54 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 99K |
| 代理商： | AP62T03GJ |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower Gate Charge
BVDSS
30V
▼ Simple Drive Requirement
RDS(ON)
12mΩ
▼ Fast Switching Characteristic
ID
54A
Description
□
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
EAS
Single Pulse Avalanche Energy
3
mJ
IAR
Avalanche Current
A
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.2
℃
/W
Rthj-a
62.5
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃
/W
Data & specifications subject to change without notice
AP62T03GH/J
Parameter
Rating
RoHS-compliant Product
Drain-Source Voltage
30
Gate-Source Voltage
+20
Continuous Drain Current
54
Linear Derating Factor
0.31
Storage Temperature Range
Continuous Drain Current
38
Pulsed Drain Current
1
120
20
Total Power Dissipation
47
-55 to 175
1
Thermal Data
Parameter
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
200903124
Operating Junction Temperature Range
-55 to 175
G
D
S
TO-252(H)
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
TO-251(J)
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