参数资料
型号: AP6502SP-13
厂商: Diodes Inc
文件页数: 3/15页
文件大小: 0K
描述: IC REG BUCK SYNC ADJ 2A 8SO
标准包装: 1
类型: 降压(降压)
输出类型: 可调式
输出数: 1
输出电压: 0.925 V ~ 16 V
输入电压: 4.75 V ~ 18 V
PWM 型: 电流模式
频率 - 开关: 340kHz
电流 - 输出: 2A
同步整流器:
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm Width)裸露焊盘
包装: 标准包装
供应商设备封装: 8-SO 裸露焊盘
其它名称: AP6502SP-13DIDKR
AP6502
Absolute Maximum Ratings (Note 4) (@T A = +25°C, unless otherwise specified.)
Symbol
V IN
V SW
V BS
V FB
V EN
V COMP
T ST
T J
T L
Parameter
Supply Voltage
Switch Node Voltage
Bootstrap Voltage
Feedback Voltage
Enable/UVLO Voltage
Comp Voltage
Storage Temperature
Junction Temperature
Lead Temperature
Rating
-0.3 to +20
-1.0 to V IN +0.3
V SW -0.3 to V SW +6
-0.3 to +6
-0.3 to +6
-0.3 to +6
-65 to +150
+150
+260
Unit
V
V
V
V
V
V
°C
°C
°C
ESD Susceptibility (Note 5)
HBM Human Body Model
MM Machine Model
3
250
kV
V
Notes:
4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability
may be affected by exposure to absolute maximum rating conditions for extended periods of time.
5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when
handling and transporting these devices.
Thermal Resistance (Note 6) (@T A = +25°C, unless otherwise specified.)
Symbol
Parameter
Rating
Unit
θ JA
θ JC
Junction to Ambient
Junction to Case
SO-8EP
SO-8
SO-8EP
SO-8
74
126
16
28
°C/W
Note:
6. Test condition: SO-8: Device mounted on 1"x1" FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
SO-8EP: Device mounted on 1" x 1" FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer and
thermal vias to bottom layer ground plane.
Recommended Operating Conditions (Note 7) (@T A = +25°C, unless otherwise specified.)
Symbol
V IN
T A
Parameter
Supply Voltage
Operating Ambient Temperature Range
Min
4.7
-40
Max
18
+85
Unit
V
°C
Note:
7. The device function is not guaranteed outside of the recommended operating conditions.
AP6502
Document Number: DS35423 Rev. 9 - 2
3 of 15
www.diodes.com
January 2013
? Diodes Incorporated
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