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参数资料
| 型号： | AP6679BGP-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 63 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 95K |
| 代理商： | AP6679BGP-HF |
AP6679BGP-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
40
80
120
160
200
240
04
8
12
16
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
-10V
-7.0 V
-6.0 V
-5.0 V
V G = - 4.0 V
0
40
80
120
160
02
46
8
10
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
-10V
-7.0V
-6.0V
-5.0V
V G = - 4.0 V
T C = 150
o C
6
8
10
12
14
24
68
10
-V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D = -30 A
T C =25 ℃
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D = -40A
V G = -10V
0.4
0.6
0.8
1
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
-
V
GS(t
h)
(V
)
0
10
20
30
40
0
0.4
0.8
1.2
1.6
-V SD , Source-to-Drain Voltage (V)
-I
S(A
)
T j =25
o C
T j =150
o C
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PDF描述 |
|---|---|
| AP6679GI-HF | 48 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| AP6800GEO | 6000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP6679GH | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP6679GH-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Simple Drive Requirement |
| AP6679GI | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP6679GI-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low Gate Charge, Single Drive Requirement |
| AP6679GJ | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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