参数资料
型号: AP6680BGYT-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8
文件页数: 1/4页
文件大小: 96K
代理商: AP6680BGYT-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
30V
▼ Small Size & Lower Profile
RDS(ON)
9m
▼ RoHS Compliant & Halogen-Free
ID
16A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
TJ
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
35
/W
Data and specifications subject to change without notice
201103291
1
AP6680BGYT-HF
Rating
Halogen-Free Product
30
+20
16
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
-55 to 150
Continuous Drain Current
3
13
Pulsed Drain Current
1
50
Storage Temperature Range
3.57
-55 to 150
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK
3x3 package is special for DC-DC converters
application and lower 1.0mm profile with backside heat sink.
G
D
S
D
S
G
PMPAK
3x3
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