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参数资料
| 型号： | AP6680BGYT-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8 |
| 文件页数： | 4/4页 |
| 文件大小： | 96K |
| 代理商： | AP6680BGYT-HF |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP6680BGYT-HF
Q
VG
4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =12 A
V DS =15V
0
200
400
600
800
1000
1200
1
5
9
131721
2529
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthia=85 ℃/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
Operation in this area
limited by RDS(ON)
0
10
20
30
40
50
60
0123456
V GS , Gate-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T j =150
o C
T j =25
o C
V DS =5V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP6680CGYT-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Size & Lower Profile |
| AP6680GM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low On-Resistance, High Vgs Max Rating Voltage |
| AP6680SGYT-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Size & Lower Profile |
| AP6681GMT-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low On-resistance, SO-8 Compatible |
| AP6683GYT-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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