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参数资料
| 型号： | AP6680AGM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 2/5页 |
| 文件大小： | 196K |
| 代理商： | AP6680AGM |
050-7407
Rev
E
8-2004
APT35GP120B2DF2
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
RBSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 600V
IC = 35A
TJ = 150°C, RG = 5, VGE =
15V, L = 100H,VCE = 960V
Inductive Switching (25°C)
VCC = 600V
VGE = 15V
IC = 35A
RG = 5
TJ = +25°C
Inductive Switching (125°C)
VCC = 600V
VGE = 15V
IC = 35A
RG = 5
TJ = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Reverse Bias Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
MIN
TYP
MAX
3240
250
31
7.5
150
21
60
140
16
20
95
40
750
1305
680
16
20
145
75
750
2130
1745
UNIT
pF
V
nC
A
ns
J
ns
J
UNIT
°C/W
gm
MIN
TYP
MAX
.23
.61
6.10
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
RΘJC
WT
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4E
on1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP6680BGM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement |
| AP6680BGYT-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Size & Lower Profile |
| AP6680CGYT-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Size & Lower Profile |
| AP6680GM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low On-Resistance, High Vgs Max Rating Voltage |
| AP6680SGYT-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Size & Lower Profile |
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