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参数资料
| 型号： | AP6680AGM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 5/5页 |
| 文件大小： | 196K |
| 代理商： | AP6680AGM |
050-7407
Rev
E
8-2004
APT35GP120B2DF2
TYPICAL PERFORMANCE CURVES
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5
10-4
10-3
10-2
10-1
1.0
10,000
5,000
1,000
500
100
50
10
160
140
120
100
80
60
40
20
0
C,
CAPACITANCE
(
P
F)
I C
,COLLECTOR
CURRENT
(A)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Reverse Bias Safe Operating Area
0
10
20
30
40
50
0 100 200 300 400 500 600 700 800 900 1000
Cres
Cies
Coes
max
max1
max 2
max1
d(on)
r
d(off )
f
diss
cond
max 2
on2
off
JC
diss
JC
Fmin(f
, f
)
0.05
f
tt
t
PP
f
EE
TT
P
R
θ
=
++
+
=
+
=
max
max1
max 2
max1
d(on)
r
d(off )
f
diss
cond
max 2
on2
off
JC
diss
JC
Fmin(f
, f
)
0.05
f
tt
t
PP
f
EE
TT
P
R
θ
=
++
+
=
+
=
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
0.25
0.20
0.15
0.10
0.05
0
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
0.0896
0.140
0.0108F
0.228F
Power
(Watts)
RC MODEL
Junction
temp. ( ”C)
Case temperature
F
MAX
,OPERATING
FREQUENCY
(kHz)
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
180
100
50
10
7
10
20
30
40
50
60
70
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 800V
RG = 5
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