参数资料
型号: AP6680AGM
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SOP-8
文件页数: 4/5页
文件大小: 196K
代理商: AP6680AGM
050-7407
Rev
E
8-2004
APT35GP120B2DF2
T
J = 125°C, VGE = 10V or 15V
T
J = 25°C, VGE = 10V or 15V
V
GE =10V,TJ=125°C
VGE= 15V
VGE= 10V
V
GE =15V,TJ=125°C
T
J = 125°C, VGE = 10V or 15V
T
J = 25°C, VGE = 10V or 15V
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
V
GE =15V,TJ=25°C
V
GE =10V,TJ=25°C
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
0
10
20
30
40
50
0
25
50
75
100
125
180
160
140
120
100
80
60
40
20
0
100
90
80
70
60
50
40
30
20
10
0
4000
3000
2000
1000
0
5000
4000
3000
2000
1000
0
T
J=125°C,VGE=15V
T
J= 25°C,VGE=15V
T
J=125°C,VGE=10V
Eon2 35A
Eon2 17.5A
Eoff 17.5A
Eoff 35A
Eoff70A
Eon2 35A
Eon2 70A
Eon2 17.5A
T
J = 25 or 125°C,VGE =10V
T
J = 25 or125°C,VGE = 10V
Eon2 70A
Eoff 70A
Eoff 35A
T
J= 25°C,VGE=10V
VCE = 600V
RG = 5
L = 100 H
R
G = 5, L = 100
H, VCE = 600V
VCE = 600V
VGE = +15V
RG = 5
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
VCE = 600V
VGE = +15V
TJ = 125°C
VCE = 600V
RG = 5
VCE = 600V
RG = 5
VCE = 600V
TJ = 25°C, TJ =125°C
RG = 5
L = 100 H
R
G = 5, L = 100
H, VCE = 600V
35
30
25
20
15
10
5
0
140
120
100
80
60
40
20
0
5000
4000
3000
2000
1000
0
8000
7000
6000
5000
4000
3000
2000
1000
0
相关PDF资料
PDF描述
AP6900GH-HF 45 A, 30 V, 0.0062 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
AP6901GSM-HF 30 V, 0.0165 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
AP6903GH-HF 32 A, 30 V, 0.0125 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
AP6904GH-HF 22 A, 30 V, 0.018 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
AP6905GH-HF 37 A, 40 V, 0.013 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
AP6680BGM-HF 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement
AP6680BGYT-HF 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Size & Lower Profile
AP6680CGYT-HF 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Size & Lower Profile
AP6680GM 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low On-Resistance, High Vgs Max Rating Voltage
AP6680SGYT-HF 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Size & Lower Profile