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参数资料
| 型号： | AP70T03GI |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 121K |
| 代理商： | AP70T03GI |
AP70T03GI
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
0.31
trr
Qrr
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
5
9
13
17
21
25
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =20 A
T C =25
o C
0
40
80
120
160
200
012
34
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
V G =4.0V
T C =25
o C
10V
8.0V
6.0V
0
20
40
60
80
100
120
012
345
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =175
o C
V G =4.0V
10V
8.0V
6.0V
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
200
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
V G =10V
I D =33A
0
10
20
30
40
0
0.4
0.8
1.2
1.6
V SD , Source-to-Drain Voltage (V)
I
S
(A
)
T j =25
o C
T j =175
o C
0.6
1
1.4
1.8
2.2
2.6
-50
0
50
100
150
200
T j ,Junction Temperature (
o C)
V
GS(t
h)
(V
)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP70T03GJ | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP70T03GP | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low Gate Charge |
| AP70T03GS | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low Gate Charge |
| AP70T15GI-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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