参数资料
型号: AP70T03GI
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: ROHS COMPLIANT, TO-220CFM, 3 PIN
文件页数: 4/5页
文件大小: 121K
代理商: AP70T03GI
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
0.31
trr
Qrr
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP70T03GI
100
1000
10000
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C rss
C oss
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS
QGD
QG
Charge
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
1000
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
2
4
6
8
10
12
0
4
8
1216
2024
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =16V
V DS =20V
V DS =24V
I D =33 A
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