参数资料
型号: AP75N07GS
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 80 A, 75 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: ROHS COMPLIANT, TO-263, 3 PIN
文件页数: 4/4页
文件大小: 131K
代理商: AP75N07GS
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP75N07GS/P
Q
VG
4.5V
QGS
QGD
QG
Charge
100
1000
10000
1
5
9
1317
2125
29
V DS ,Drain-to-Source Voltage (V)
C
(
pF)
f=1.0MHz
C iss
C oss
C rss
1
10
100
1000
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0
40
80
120
02
46
V GS , Gate-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T j =25
o C
V DS =5V
0
2
4
6
8
10
12
14
0
40
80
120
160
200
Q G , Total Gate Charge (nC)
V
GS
,G
ate
to
S
ou
rc
eVoltage
(
V
)
V DS = 40V
V DS =48 V
V DS =60 V
I D = 40A
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
ormalize
dT
h
er
mal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
DUTY=0.5
SINGLE PULSE
0.2
T j =175
o C
相关PDF资料
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AP75N07GP 80 A, 75 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP75N07GW 90 A, 75 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
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