参数资料
型号: AP75N07GW
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 90 A, 75 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, TO-3P, 3 PIN
文件页数: 1/4页
文件大小: 126K
代理商: AP75N07GW
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low Gate Charge
BVDSS
75V
▼ Simple Drive Requirement
RDS(ON)
11mΩ
▼ Fast Switching Characteristic
ID
90A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
4
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
1
A
PD@TC=25℃
Total Power Dissipation
W
W/℃
EAS
mJ
TSTG
TJ
Operating Junction Temperature Range
Thermal Data
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
40
/W
Data & specifications subject to change without notice
-55 to 150
250
Linear Derating Factor
Single Pulse Avalanche Energy
3
Storage Temperature Range
90
70
360
-55 to 150
Parameter
Rating
75
+20
1
200902232
AP75N07GW
RoHS-compliant Product
2
450
Parameter
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-3P package is widely preferred for commercial-industrial
surface mount applications and suited for higher voltage applications
such as SMPS.
G
D
S
TO-3P
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