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参数资料
| 型号： | AP75N07GW |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 90 A, 75 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 126K |
| 代理商： | AP75N07GW |
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. On-Resistance vs.
Reverse Diode
Drain Current
3
AP75N07GW
0
40
80
120
160
200
240
280
036
9
12
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T C =25
o C
V G =3.0V
10V
7.0 V
5.0V
4.5V
0
40
80
120
160
200
240
0369
12
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T C = 150
o C
V G =3.0V
10V
7.0 V
5.0V
4.5V
8
12
16
20
2468
10
V GS Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =20A
T C =25
o C
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
ormalize
dR
DS(ON)
I D =40A
V G =10V
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I S
(A
)
T j =25
o C
T j =150
o C
9
10
11
12
13
0
2040
6080
I D , Drain Current (A)
R
DS(ON)
(m
)
V GS =4.5V
V GS =10V
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相关代理商/技术参数 |
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| AP75T10AGP | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP75T10AGP-HF-3TB | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 105V 15MOHM TO-220 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 105V, 15MOHM, TO-220 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 105V, 15MOHM, TO-220, Transistor Polarity:N Channel, Continuous Drain Current Id:65A, Drain Source Voltage Vds:105V, On Resistance Rds(on):0.015ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:138W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 105V, 15MOHM, TO-220, Transistor Polarity:N Channel, Continuous Dra |
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