参数资料
型号: AP75T10GS
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 65 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: ROHS COMPLIANT, TO-263, 3 PIN
文件页数: 1/6页
文件大小: 225K
代理商: AP75T10GS
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
100V
▼ Lower On-resistance
RDS(ON)
15mΩ
▼ Fast Switching Characteristic
ID
65A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.9
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
/W
Data and specifications subject to change without notice
200806053
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
138
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
1.11
Continuous Drain Current, VGS @ 10V
41
Pulsed Drain Current
1
260
Gate-Source Voltage
±20
Continuous Drain Current, VGS @ 10V
65
Parameter
Rating
Drain-Source Voltage
100
1
AP75T10GS/P
RoHS-compliant Product
G
D
S
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP75T10GP)
are available for low-profile applications.
G
D
S
TO-263(S)
G
D
S
TO-220(P)
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相关代理商/技术参数
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