参数资料
型号: AP75T10GS
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 65 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: ROHS COMPLIANT, TO-263, 3 PIN
文件页数: 4/6页
文件大小: 225K
代理商: AP75T10GS
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP75T10GS/P
0
2
4
6
8
10
12
0
20
40
60
80
100
120
140
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =50 V
V DS =64 V
V DS =80 V
I D =30 A
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS
QGD
QG
Charge
100
1000
10000
1
5
9
1317
2125
29
V DS ,Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
1000
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
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