- 您现在的位置：买卖IC网 > PDF目录36697 > AP9576GM (ADVANCED POWER ELECTRONICS CORP) 60 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | AP9576GM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 60 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SOP-8 |
| 文件页数： | 2/4页 |
| 文件大小： | 69K |
| 代理商： | AP9576GM |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-60
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=-1mA
-
-0.06
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-4A
-
90
mΩ
VGS=-4.5V, ID=-3A
-
120
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.8
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-4A
-
7
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-60V, VGS=0V
-
-10
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-48V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±25V
-
±100
nA
Qg
Total Gate Charge
2
ID=-4A
-
15
24
nC
Qgs
Gate-Source Charge
VDS=-48V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5
-
nC
td(on)
Turn-on Delay Time
2
VDS=-30V
-
8
-
ns
tr
Rise Time
ID=-1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
36
-
ns
tf
Fall Time
RD=30Ω
-7
-
ns
Ciss
Input Capacitance
VGS=0V
-
1170
1880
pF
Coss
Output Capacitance
VDS=-25V
-
120
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
90
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=-2A, VGS=0V
-
-1.2
V
t
rr
Reverse Recovery Time
2
IS=-4A, VGS=0V,
-
32
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
47
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
AP9576GM
相关PDF资料 |
PDF描述 |
|---|---|
| AP9578GJ | 10 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP9578GH | 10 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP9578GS | 10 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AP9578GP | 10 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP9579GP-HF | 45 A, 60 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP9577GI | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9578GH | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9578GI-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9578GJ | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9578GM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
发布紧急采购，3分钟左右您将得到回复。