参数资料
型号: AP9576GM
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 60 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, SOP-8
文件页数: 4/4页
文件大小: 69K
代理商: AP9576GM
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP9576GM
td(on) tr
td(off)tf
VDS
VGS
10%
90%
Q
VG
-4.5V
QGS
QGD
QG
Charge
10
100
1000
10000
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
C
(p
F)
f=1.0MHz
C iss
C oss
C rss
0
3
6
9
12
0
7
14
21
28
35
Q G , Total Gate Charge (nC)
-V
GS
,
Gate
to
S
o
u
rc
eV
oltage
(
V
)
I D = -4A
V DS = - 48 V
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Norm
alize
d
Th
er
m
al
R
espon
se
(
R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
-I
D
(A)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
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