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参数资料
| 型号： | AP9576GM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 60 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SOP-8 |
| 文件页数： | 3/4页 |
| 文件大小： | 69K |
| 代理商： | AP9576GM |
AP9576GM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
10
20
30
0
2
4
6
8
10
12
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Cu
rre
n
t(A)
T A =25
o C
-10V
-7.0V
-5.0V
-4.5V
V G =-3.0V
0
10
20
30
02
468
10
12
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Cu
rre
n
t(A)
T A = 150
o C
-10V
-7.0V
-5.0V
-4.5V
V G =-3.0V
74
78
82
86
90
24
68
10
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
ΩΩΩΩ
)
I D =-3 A
T A =25 ℃
℃
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(
ON)
I D =-4A
V G =-10V
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
Normalize
d
V
GS(
th)
(V
)
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
-I
S
(A
)
T j =25
o C
T j =150
o C
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PDF描述 |
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| AP9578GJ | 10 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
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| AP9578GS | 10 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP9577GI | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9578GH | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9578GI-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9578GJ | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9578GM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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