参数资料
型号: APL602L
元件分类: JFETs
英文描述: 49 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封装: TO-264, 3 PIN
文件页数: 2/4页
文件大小: 71K
代理商: APL602L
DYNAMIC CHARACTERISTICS
APL602B2-L
050-5894
Rev
E
8-2003
Symbol
C
iss
C
oss
C
rss
t
d
(on)
t
r
t
d
(off)
t
f
MIN
TYP
MAX
7485
9000
1290
1810
617
930
13
26
27
54
56
84
16
20
UNIT
pF
ns
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 15V
V
DD
= 300V
I
D
= 49A @ 25°C
R
G
= 0.6
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
THERMAL CHARACTERISTICS
Characteristic
Junction to Case
Junction to Ambient
Symbol
RθJC
RθJA
MIN
TYP
MAX
.17
40
UNIT
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 2.50mH, RG = 25, Peak IL = 49A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.5
0.1
0.3
0.7
0.9
0.05
Z
Θ
JC
,THERMAL
IMPEDANCE
(°C/W)
SINGLE PULSE
FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL
0.0575
0.113
0.0187F
0.358F
Power
(Watts)
RC MODEL
Junction
temp. ( ”C)
Case temperature
相关PDF资料
PDF描述
APL602B2 49 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
APL602L 49 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APL602B2 49 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
APM9948KC-TRG 4 A, 60 V, 0.085 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
APM9948KC-TRL 4 A, 60 V, 0.085 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
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