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参数资料
| 型号： | APL602L |
| 元件分类： | JFETs |
| 英文描述： | 49 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 71K |
| 代理商： | APL602L |
050-5894
Rev
E
8-2003
Typical Performance Curves
APL602B2-L
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
120
100
80
60
40
20
0
120
100
80
60
40
20
0
50
100
150
200
250
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS
7 V
6 V
6.5 V
VGS=10V, 15 V
5.5 V
7 V
6 V
6.5 V
5.5 V
7.5 V
VGS=10, 15V
7.5 V
8 V
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
BV
DSS
(ON),
DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
VOLTAGE
(NORMALIZED)
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = +125°C
TJ = +25°C
TJ = -55°C
VGS=10V
VGS=20V
NORMALIZED TO
V
GS
= 10V @ 29A
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE4,TRANSFERCHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
0
2
4
6
8
10
0
20
40
60
80
100
120
25
50
75
100
125
150
-50
0
50
100
150
1.30
1.20
1.10
1.00
0.90
0.80
0.70
1.15
1.10
1.05
1.00
0.95
0.90
80
60
40
20
0
50
40
30
20
10
0
相关PDF资料 |
PDF描述 |
|---|---|
| APL602B2 | 49 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APL602L | 49 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APL602B2 | 49 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APM9948KC-TRG | 4 A, 60 V, 0.085 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| APM9948KC-TRL | 4 A, 60 V, 0.085 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APL602L-1 | 制造商:Microsemi Corporation 功能描述:APL602L-1 - Bulk |
| APL602LG | 功能描述:MOSFET N-CH 600V 49A TO-264 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APL-6130-2 | 制造商:Airpax 功能描述:CIRCUIT PROTECTOR HYD MAGNETIC 制造商:Sensata Technologies 功能描述:APL-6130-2 /Pole # 6 /Prod Family: 0204 |
| APL6535 | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:Two-Channel Supervisory IC |
| APL6535BI-TR | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:Two-Channel Supervisory IC |
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