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参数资料
| 型号： | APM9988COC-TR |
| 厂商： | Anpec Electronics Corporation |
| 英文描述： | Dual N-Channel Enhancement Mode MOSFET |
| 中文描述： | 双N沟道增强型MOS管 |
| 文件页数： | 2/10页 |
| 文件大小： | 191K |
| 代理商： | APM9988COC-TR |
Copyright
ANPEC Electronics Corp.
Rev. B.1 - S ep., 2005
www.anpec.com.tw
2
APM9988CO
Absolute Maximum Rating s
(T
A
= 25
°
C unless otherwise noted)
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
Drain-Source Voltage
20
Gate-Source Voltage
±8
V
Continuous Drain Current
300
μ
s Pulsed Drain Current
Diode Continuous Forward Current
6
20
V
GS
=4.5V
A
1.4
A
T
J
T
STG
Maximum Junction Temperature
150
Storage Temperature Range
-55 to 150
°C
T
A
=25°C
T
A
=100°C
1.25
0.5
P
D
*
Maximum Power Dissipation
W
R
θ
JA
*
Thermal Resistance-Junction to Ambient
100
°C/W
Note:
*Surface Mounted on 1in
2
pad area, t
≤
10sec.
APM9988CO
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
DS
=250
μ
A
V
DS
=16V, V
GS
=0V
20
V
1
I
DSS
Zero Gate Voltage Drain Current
T
J
=85°C
30
μ
A
V
GS(th)
I
GSS
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=±8V, V
DS
=0V
V
GS
=4.5V, I
DS
=6A
V
GS
=2.5V, I
DS
=5.2A
I
SD
=0.5A, V
GS
=0V
0.5
0.7
1
V
Gate Leakage Current
±10
μ
A
16
20
R
DS(ON)
a
Drain-Source On-state Resistance
19
25
m
V
SD
a
Diode Forward Voltage
0.7
1.3
V
Gate Charge Characteristics
b
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
16.5
21
4.5
V
DS
=10V, V
GS
=4.5V,
I
DS
=6A
4.5
nC
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