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参数资料
| 型号： | APM9988COC-TR |
| 厂商： | Anpec Electronics Corporation |
| 英文描述： | Dual N-Channel Enhancement Mode MOSFET |
| 中文描述： | 双N沟道增强型MOS管 |
| 文件页数： | 9/10页 |
| 文件大小： | 191K |
| 代理商： | APM9988COC-TR |
Copyright
ANPEC Electronics Corp.
Rev. B.1 - S ep., 2005
www.anpec.com.tw
9
APM9988CO
Carrier Tape & R eel Dimensions
t
Ao
E
W
Po
P
Ko
Bo
D1
D
F
P1
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures
Package Thickness
Volume mm
3
<350
240 +0/-5
°
C
225 +0/-5
°
C
Volume mm
3
3
350
225 +0/-5
°
C
225 +0/-5
°
C
<2.5 mm
≥
2.5 mm
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm
3
<350
<1.6 mm
260 +0
°
C*
1.6 mm – 2.5 mm
260 +0
°
C*
≥
2.5 mm
250 +0
°
C*
*Tolerance: The device manufacturer/supplier
shall
assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0
°
C.
For example 260
°
C+0
°
C) at the rated MSL level.
R eliability Test Prog ram
Volume mm
3
350-2000
260 +0
°
C*
250 +0
°
C*
245 +0
°
C*
Volume mm
3
>2000
260 +0
°
C*
245 +0
°
C*
245 +0
°
C*
Classification R eflow Profiles( Cont.)
Test item
Method
Description
SOLDERABILITY
HOLT
PCT
TST
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
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