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参数资料
| 型号： | APM9988COC-TUL |
| 厂商： | Anpec Electronics Corporation |
| 英文描述： | Dual N-Channel Enhancement Mode MOSFET |
| 中文描述： | 双N沟道增强型MOS管 |
| 文件页数： | 8/10页 |
| 文件大小： | 191K |
| 代理商： | APM9988COC-TUL |
Copyright
ANPEC Electronics Corp.
Rev. B.1 - S ep., 2005
www.anpec.com.tw
8
APM9988CO
Terminal Material
Lead Solderability
Reflow Condition
(IR/Convection or VPR Reflow)
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
t 25 C to Peak
tp
Ramp-up
t
L
Ramp-down
ts
Preheat
Tsmax
Tsmin
T
L
T
P
25
T
Time
Critical Zone
T
L
to T
P
Classification R eflow Profiles
Physical S pecifications
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate
(T
L
to T
P
)
Preheat
-
Temperature Min (Tsmin)
-
Temperature Max (Tsmax)
-
Time (min to max) (ts)
Time maintained above:
-
Temperature (T
L
)
-
Time (t
L
)
Peak/Classificatioon Temperature (Tp)
Time within 5
°
C of actual
Peak Temperature (tp)
Ramp-down Rate
Time 25
°
C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
3
°
C/second max.
3
°
C/second max.
100
°
C
150
°
C
60-120 seconds
150
°
C
200
°
C
60-180 seconds
183
°
C
60-150 seconds
217
°
C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6
°
C/second max.
6 minutes max.
6
°
C/second max.
8 minutes max.
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