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参数资料
| 型号： | APT1002RCN |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | LJT 61C 61#20 SKT RECP |
| 中文描述： | ? -通道增强型高压功率MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 50K |
| 代理商： | APT1002RCN |
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25
°
C
Pulsed Drain Current
1
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25
°
C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250
μ
A)
On State Drain Current
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
°
C)
Gate-Source Leakage Current (V
GS
=
±
30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
THERMAL CHARACTERISTICS
Symbol
R
θ
JC
R
θ
JA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
0.51
40
UNIT
°
C/W
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
MIN
TYP
MAX
APT1002RBN
1000
APT1002R4BN
1000
APT1002RBN
7.0
APT1002R4BN
6.5
APT1002RBN
2.00
APT1002R4BN
2.40
250
1000
±
100
2
4
UNIT
Volts
Amps
Ohms
μ
A
nA
Volts
UNIT
Volts
Amps
Volts
Watts
W/
°
C
°
C
APT
APT
1002RBN
1002R4BN
1000
1000
7.0
6.5
28
26
±
30
240
1.96
-55 to 150
300
MAXIMUM RATINGS
All Ratings: T
C
= 25
°
C unless otherwise specified.
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT1002RBN
1000V 7.0A 2.00
APT1002R4BN 1000V 6.5A 2.40
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV
0
TO-247
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadéra Nord
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
G
D
S
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