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参数资料
| 型号： | APT1002RCN |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | LJT 61C 61#20 SKT RECP |
| 中文描述： | ? -通道增强型高压功率MOSFET |
| 文件页数： | 4/4页 |
| 文件大小： | 50K |
| 代理商： | APT1002RCN |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
TO-247AD Package Outline
0
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
Gate
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
3.55 (.140)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Dimensions in Millimeters and (Inches)
D
C
°
C
J
°
C
SINGLE PULSE
1
60
0
8
4
12
16
20
20
2
1
5
10
10
100
1,000
10,000
100
50
0
.5
1.0
1.5
2.0
10
30
50
0
40
20
TJ
°
C
J
°
C
Crss
iss
C
oss
C
VDS
10
DC
100mS
10mS
1mS
100
μ
S
10
μ
S
0
20
40
60
80
100
APT1002R/1002R4BN
1
5
10
50 100
1000
VDS
VDS
I
D
= I
D
[Cont.]
APT1002RBN
APT1002RBN
APT1002R4BN
APT1002R4BN
OPERATION HERE
LIMITED BY RDS
APT1002R/1002R4BN
.1
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| APT1004R2KN | Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:18-32 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT1002RDN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP |
| APT10030L2VFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10030L2VFR_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10030L2VFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
| APT10030L2VR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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