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参数资料
| 型号： | APT10090HLL |
| 元件分类： | JFETs |
| 英文描述： | 9.3 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA |
| 封装： | HERMETIC SEALED, TO-258, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 144K |
| 代理商： | APT10090HLL |
050-7338
Rev
A
8-2004
APT10090HLL
Typical Performance Curves
5V
5.5V
6V
6.5
VGS =15,10V& 7.5V
7V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VGS=10V
VGS=20V
VDS> ID (ON) x RDS(ON) MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS(TH)
,THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
5
10
15
20
25
30
0
1
23
4
567
8
0
5
10
15
20
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
30
25
20
15
10
5
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.0535
0.127
0.419
0.000281F
0.0170F
0.385F
Power
(Watts)
Junction
temp. ( ”C)
RC MODEL
Case temperature
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 8, R
DS(ON) vs. TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
30
25
20
15
10
5
0
10
9
8
7
6
5
4
3
2
1
0
2.5
2.0
1.5
1.0
0.5
0.0
NORMALIZED TO
V
GS = 10V @ ID = 4.65A
I
D = 4.65A
V
GS = 10V
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