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参数资料
| 型号： | APT10090HLL |
| 元件分类： | JFETs |
| 英文描述： | 9.3 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA |
| 封装： | HERMETIC SEALED, TO-258, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 144K |
| 代理商： | APT10090HLL |
APT10090HLL
050-7338
Rev
A
8-2004
Typical Performance Curves
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
1000
0
10
20
30
40
50
0
10 20 30 40 50 60 70 80 90 100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
40
10
1
.1
16
12
8
4
0
10mS
1mS
100S
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
VDS=500V
VDS=200V
VDS=800V
I
D = 9.3A
TJ=+150°C
TJ=+25°C
Crss
Ciss
Coss
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 667V
R
G = 5
T
J = 125°C
L = 100H
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
10,000
1,000
100
10
200
100
10
1
5
10
15
20
0
5
101520
5
10
15
20
0
5
1015 20 2530
35 40 45 50
60
50
40
30
20
10
0
1200
1000
800
600
400
200
0
40
30
20
10
0
1000
800
600
400
200
0
V
DD = 667V
R
G = 5
T
J = 125°C
L = 100H
V
DD = 667V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
V
DD = 667V
I
D = 9.3A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
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相关代理商/技术参数 |
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