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参数资料
型号： APT100GN120B2
厂商： MICROSEMI POWER PRODUCTS GROUP
元件分类： IGBT 晶体管
英文描述： 245 A, 1200 V, N-CHANNEL IGBT
文件页数： 2/6页
文件大小： 128K
代理商： APT100GN120B2
050-7626
Re
v
A
12-2007
APT100GN120B2
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode.
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R
G
is external gate resistance, not including R
G(int)
nor gate driver impedance. (MIC4452)
8 Continuous Current limited by package lead temperature.
Microsemi reserves the right to change, without notice, the specications and information contained herein.
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 600V
I
C
= 100A
T
J
= 150°C, R
G
= 4.3
Ω 7, V
GE
=
15V, L = 100H,V
CE
= 1200V
Inductive Switching (25°C)
V
CC
= 800V
V
GE
= 15V
I
C
= 100A
R
G
= 1.0
Ω 7
T
J
= +25°C
Inductive Switching (125°C)
V
CC
= 800V
V
GE
= 15V
I
C
= 100A
R
G
= 1.0
Ω 7
T
J
= +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4 4
Turn-on Switching Energy (Diode)
55
Turn-off Switching Energy
66
MIN
TYP
MAX
6500
365
280
9.5
540
50
295
300
50
615
105
11
15
9.5
50
725
210
12
22
14
UNIT
pF
V
nC
A
ns
mJ
ns
mJ
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
gm
MIN
TYP
MAX
.13
N/A
6.1
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
RθJC
W
T
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相关代理商/技术参数
参数描述
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APT100GN60B2 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:IGBT
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