- 您现在的位置：买卖IC网 > PDF目录57944 > APT100GN120J 153 A, 1200 V, N-CHANNEL IGBT PDF资料下载
参数资料
| 型号： | APT100GN120J |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 153 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ISOTOP-4 |
| 文件页数： | 4/6页 |
| 文件大小： | 412K |
| 代理商： | APT100GN120J |
050-7623
Rev
A
10-2005
APT100GN120J
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 800V
R
G = 1.0
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE = 800V
T
J = 25°C, or 125°C
R
G = 1.0
L = 100H
60
50
40
30
20
10
0
250
200
150
100
50
0
80,000
60,000
40,000
20,000
0
100,000
80,000
60,000
40,000
20,000
0
1000
800
600
400
200
0
250
200
150
100
50
0
30,000
25,000
20,000
15,000
10,000
5000
0
80,000
60,000
40,000
20,000
0
V
GE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
VCE = 800V
VGE = +15V
RG = 1.0
10
40
70
100 130 160
190
220
10
40
70
100
130 160
190
220
10
40
70
100
130
160 190
220
10
40
70
100
130 160 190
220
10
40
70
100
130 160 190 220
10
40
70
100
130 160
190 220
0
5
10
15
20
0
25
50
75
100
125
R
G = 1.0, L = 100H, VCE = 800V
R
G = 1.0, L = 100H, VCE = 800V
T
J = 25 or 125°C,VGE = 15V
VCE = 800V
VGE = +15V
RG = 1.0
T
J = 125°C
T
J = 25°C
VCE = 800V
VGE = +15V
RG = 1.0
T
J = 125°C
T
J = 25°C
E
on2,200A
E
off,200A
E
on2,100A
E
off,100A
E
on2,50A
E
off,50A
VCE = 800V
VGE = +15V
TJ = 125°C
E
on2,200A
E
off,200A
E
on2,100A
E
off,100A
E
on2,50A
E
off,50A
相关PDF资料 |
PDF描述 |
|---|---|
| APT10GT60BR | 20 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT10M11B2VR | 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10M11JVRU3 | 142 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10M11LVR | 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT10M11LVR | 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT100GN120JDQ4 | 功能描述:IGBT 1200V 153A 446W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT100GN60B2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:IGBT |
| APT100GN60B2G | 功能描述:IGBT 600V 229A 625W TMAX RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT100GN60LDQ4 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:IGBT |
| APT100GN60LDQ4G | 功能描述:IGBT 600V 229A 625W TO264 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
发布紧急采购，3分钟左右您将得到回复。