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参数资料
| 型号： | APT11GF120KR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 25 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 395K |
| 代理商： | APT11GF120KR |
052-6213
Rev
C
1-2006
APT11GF120KR(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 400A)
Gate Threshold Voltage (V
CE = VGE, I C = 350A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 8A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 8A, Tj = 125°C)
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT11GF120KR(G)
1200
±30
25
14
44
44A @ 1200V
156
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C = 25°C
Continuous Collector Current @ T
C = 100°C
Pulsed Collector Current 1
Switching Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
1200
4.5
5.5
6.5
2.5
3.0
3.1
400
2000
±100
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through
technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-
taxial Diode (FRED) offers superior ruggedness and fast switching speed.
Low Forward Voltage Drop
High Freq. Switching to 20KHz
RBSOA and SCSOA Rated
Ultra Low Leakage Current
Ultrafast Soft Recovery Anti-parallel Diode
FAST IGBT & FRED
1200V
APT11GF120KR
APT11GF120KRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
TO-220
G
C
E
相关PDF资料 |
PDF描述 |
|---|---|
| APT11GF120KRG | 25 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| APT11GF120KR | 25 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| APT11GP60SA | 41 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| APT11GP60KG | 41 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT11GP60SA | 41 A, 600 V, N-CHANNEL IGBT, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT11GF120KRG | 功能描述:IGBT 1200V 25A 156W TO220 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT11GP60BDQB | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT11GP60BDQBG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT11GP60K | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT11GP60KG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube |
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