- 您现在的位置：买卖IC网 > PDF目录51262 > APT11GF120KR 25 A, 1200 V, N-CHANNEL IGBT, TO-220AB PDF资料下载
参数资料
| 型号： | APT11GF120KR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 25 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 395K |
| 代理商： | APT11GF120KR |
052-6213
Rev
C
1-2006
APT11GF120KR(G)
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 800V
R
G = 10
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G = 10, L = 100H, VCE = 800V
V
CE = 800V
T
J = 25°C, or 125°C
R
G = 10
L = 100H
V
GE = 15V
T
J = 25 or 125°C,VGE = 15V
0
4
8
12
16
20
0
4
8
12
16
20
0
4
8
12
16
20
0
4
8
12
16
20
0
4
8
12
16
20
0
4
8
12
16
20
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 10, L = 100H, VCE = 800V
10
8
6
4
2
0
12
10
8
6
4
2
0
2500
2000
1500
1000
500
0
4000
3500
3000
2500
2000
1500
1000
500
0
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
140
120
100
80
60
40
20
0
90
80
70
60
50
40
30
20
10
0
800
700
600
500
400
300
200
100
0
2500
2000
1500
1000
500
0
VCE = 800V
VGE = +15V
RG = 10
T
J = 125°C
T
J = 25°C
VCE = 800V
VGE = +15V
RG = 10
T
J = 125°C
T
J = 25°C
E
on2,16A
E
off,16A
E
on2,8A
E
off,8A
E
on2,4A
E
off,4A
VCE = 800V
VGE = +15V
TJ = 125°C
VCE = 800V
VGE = +15V
RG = 10
E
on2,16A
E
off,16A
E
on2,8A
E
off,8A
E
on2,4A
E
off,4A
相关PDF资料 |
PDF描述 |
|---|---|
| APT11GF120KRG | 25 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| APT11GF120KR | 25 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| APT11GP60SA | 41 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| APT11GP60KG | 41 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT11GP60SA | 41 A, 600 V, N-CHANNEL IGBT, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT11GF120KRG | 功能描述:IGBT 1200V 25A 156W TO220 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT11GP60BDQB | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT11GP60BDQBG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT11GP60K | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT11GP60KG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube |
发布紧急采购，3分钟左右您将得到回复。