- 您现在的位置：买卖IC网 > PDF目录369364 > APT12031JLL (Advanced Power Technology Ltd.) Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. PDF资料下载
参数资料
| 型号： | APT12031JLL |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| 中文描述： | 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代。 |
| 文件页数： | 2/2页 |
| 文件大小： | 69K |
| 代理商： | APT12031JLL |
DYNAMIC CHARACTERISTICS
APT12031JLL
0
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
Dimensions in Millimeters and (Inches)
30.1 (1.185)
38.0 (1.496)
14.9 (.587)
11.8 (.463)
8.9 (.350)
Hex Nut M4
0.75 (.030)
12.6 (.496)
25.2 (0.992)
1.95 (.077)
* Source
Drain
Gate
*
r = 4.0 (.157)
4.0 (.157)
W=4.1 (.161)
(4 places)
3.3 (.129)
* Source
Source terminals are shorted
internally. Current handling
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/μs)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/μs)
Peak Diode Recovery
dv
/
dt 5
INFORMATION
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
GS
= 10V
DD
= 0.5 V
DSS
= I
D[Cont.]
@ 25°C
GS
= 15V
DD
= 0.5 V
DSS
= I
D[Cont.]
@ 25°C
R
G
= 0.6
W
MIN
TYP
MAX
11300
1560
1180
397
48
237
23
16
79
30
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D[Cont.]
)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
μC
V/ns
MIN
TYP
MAX
30
120
1.3
1400
38.0
10
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
4
Starting T
j
=
+25°C, L = 8.0mH, R
G
=
25
W
, Peak I
L
= 30A
5 dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
￡
-
I
[
]
di
/
dt
￡
700A/μs
V
R
￡
V
DSS
T
J
￡
150
°
C
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
R
q
JC
R
q
JA
MIN
TYP
MAX
0.18
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv
/
dt
相关PDF资料 |
PDF描述 |
|---|---|
| APT12067B2LL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS |
| APT12GT60BR | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs |
| APT12GT60KR | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT20GF120BR | The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT20GF120BRD | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT12040JFLL | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
| APT12040JLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT12040JVFR | 功能描述:MOSFET N-CH 1200V 26A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS V® 标准包装:10 系列:* |
| APT12040JVR | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APT12040L2FLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
发布紧急采购，3分钟左右您将得到回复。