参数资料
型号: APT13GP120BSC
元件分类: IGBT 晶体管
英文描述: 41 A, 1200 V, N-CHANNEL IGBT, TO-247AD
封装: TO-247, 3 PIN
文件页数: 8/8页
文件大小: 194K
代理商: APT13GP120BSC
050-7417
Rev
A
2-2004
APT13GP120BSC
I F
,(AV)
FORWARD
CURRENT
I F
,FORWARD
CURRENT
(A)
C
J,
JUNCTION
CAPACITANCE
I r,
REVERSE
CURRENT
(pF)
(
A)
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°C
TJ = -55°C
TJ =25°C
VR = 400V
0
2
4
6
8
10
12
14
16
0 200 400 600 800 1000 1200140016001800
25
50
75
100
125
150
175
.4
1
10
100
400
100
80
60
40
20
0
500
400
300
200
100
0
30
25
20
15
10
5
0
12
10
8
6
4
2
0
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°C
T0-247 Package Outline
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
VF, ANODE-TO-CATHODE VOLTAGE (V)
VR, CATHODE-TO-ANODE VOLTAGE (V)
Figure 26. Forward Current vs. Forward Voltage
Figure 27. Reverse Current vs. Reverse Voltage
Case Temperature (°C)
VR, REVERSE VOLTAGE (V)
Figure 28. Current Derating
Figure 29. Junction Capacitance vs. Reverse Voltage
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector (Cathode)
相关PDF资料
PDF描述
APT14050JVFR 23 A, 1400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
APT14050JVFR 23 A, 1400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
APT150GN60B2 220 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT15GP90BDF1 43 A, 900 V, N-CHANNEL IGBT, TO-247AD
APT15GT120BRDQ1 36 A, 1200 V, N-CHANNEL IGBT, TO-247AD
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