- 您现在的位置：买卖IC网 > PDF目录36706 > APT150GN60JDQ4 220 A, 600 V, N-CHANNEL IGBT PDF资料下载
参数资料
| 型号： | APT150GN60JDQ4 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 220 A, 600 V, N-CHANNEL IGBT |
| 封装： | ISOTOP-4 |
| 文件页数： | 7/9页 |
| 文件大小： | 533K |
| 代理商： | APT150GN60JDQ4 |
050-7625
Rev
A
4-2006
APT150GN60JDQ4
TYPICAL PERFORMANCE CURVES
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
D = 0.9
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 103°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F(AV)
I
F(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 150A
Forward Voltage
I
F = 300A
I
F = 150A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
1.83
2.33
1.47
APT100GN60LDQ4
100
146
1000
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
34
-
160
-
290
-
5
-
220
-
1530
-
13
-
100
-
2890
-
44
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 100A, diF/dt = -200A/s
V
R = 400V, TC = 25°C
I
F = 100A, diF/dt = -200A/s
V
R = 400V, TC = 125°C
I
F = 100A, diF/dt = -1000A/s
V
R = 400V, TC = 125°C
I
F = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25°C
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
SINGLE PULSE
0.05
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
0.0673
0.188
0.0743
0.0182
0.361
5.17
Power
(watts)
Junction
temp(°C)
RC MODEL
Case temperature(°C)
相关PDF资料 |
PDF描述 |
|---|---|
| APT150GN60LDQ4 | 220 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| APT15F50KF | 6.2 A, 500 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| APT15GP60BDF1 | 56 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT15GP60BDQ1 | 56 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT15GP60BDQ1G | 56 A, 600 V, N-CHANNEL IGBT, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT150GN60LDQ4 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT150GN60LDQ4G | 功能描述:IGBT 600V 220A 536W TO-264L RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT150GT120JR | 功能描述:IGBT 1200V 170A 830W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:Thunderbolt IGBT® 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT-15A | 制造商:OPTIFUSE 功能描述: |
| APT15D100B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
发布紧急采购，3分钟左右您将得到回复。